8486 20 00 Maskiner och apparater för framställning av halvledarkomponenter eller halvledarelement och av elektroniska integrerade kretsar

Import till EU

Tullsats (tredjeland)

0 % (fri)

EUDR

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Taric-nummer (10 siffror)

1

Källor: Tullverket (Tulltaxan), EUR-Lex · cn2026. Ursprungsland, förmånstull och nästa steg ›

Varor som har klassificerats här

Exempel ur EU:s databas över bindande klassificeringsbesked (BKB/BTI). Beskeden gäller bara för sin innehavare och många har löpt ut — se dem som vägledning, inte som beslut för din vara.

• SPUTTERING/THERMAL DEPOSITION SYSTEM. IN THE FORM OF A MODULAR MACHINE SYSTEM CONSISTING OF VACUUM COATING CHAMBERS, VACUUM PUMPS, OPTIONAL LOCK CHAMBER AND SUBSTRATE TRANSFER HANDLING SYSTEM WITH SUBSTRATE AND TARGET HOLDERS. IT HAS THERMAL OR ELECTRON BEAM EVAPORATION WITH ALTERNATING CURRENT OR DIRECT CURRENT GENERATOR OR MAGNETRON SPUTTERING PLASMA SOURCES WITH HIGH FREQUENCY AND/OR DIRECT…

  8486 20 00 · GB 2019 · GBBTI504423877

• AN ION BEAM ETCH AND DEPOSITION SYSTEM USED FOR ION BEAM ETCHING, REACTIVE ION BEAM ETCHING, REACTIVE ION BEAM DEPOSITION, CHEMICALLY ASSISTED ION BEAM ETCHING, ION BEAM SPUTTER DEPOSITION, ION ASSISTED SPUTTER DEPOSITION. SPECIFICALLY DEVELOPED FOR HIGH QUALITY OPTICAL APPLICATIONS INCLUDING HIGH REFLECTIVE AND ANTI-REFLECTIVE COATINGS. COMES WITH STANDARD CHAMBER WHICH IS IDEAL FOR DEPOSITION…

  8486 20 00 · GB 2018 · GBBTI503739454

• THIS SYSTEM IS CONFIGURED FOR ION BEAM ETCH (IBE) ONLY AND IS SUPPLIED WITH THE FOLLOWING CONFIGURATION; STAINLESS STEEL PROCESS CHAMBER WITH EXCHANGEABLE LINERS SYSTEM CONSOLE WATER COOLED SUBSTRATE HOLDER AND HELIUM "BACKSIDE COOLING" COMPUTER CONTROL ION SOURCE / OPTICS VACUUM MEASUREMENT GAS SUPPLY PUMPING SYSTEM TRANSFER STATION VACUUM CASSETTE STATION SIMS. THE SYSTEM IS CONFIGURED TO…

  8486 20 00 · GB 2018 · GBBTI503753464

• A METAL-ORGANIC CHEMICAL VAPOUR DEPOSITION REACTOR BASED UPON CLOSED COUPLED SHOWERHEAD CONCEPT. INITIALLY DEVELOPED FOR GROWTH OF INP AND GAAS BASED MATERIALS. IT PROVIDES SUSCEPTOR- SUBSTRATE OPTIONSFOR BOTJ INP (INDIUM PHOSPHIDE) AND GAAS GAN (GALIUM NITRATE) THE REACTOR DESIGN IS BASED ON THE STAGNANT POINT CONCEPT. REAGENTS ENTER THE STAINLES STEEL, QUARTZ LINED REACTOR CHAMBER THROUGH A…

  8486 20 00 · GB 2017 · GB503470774

• REACTOR SYSTEM FOR GROWTH OF CARBON BASED NANO MATERIALS. THE SYSTEM IS COMPUTER CONTROLLED AND INCLUDES AS HEATER, SHOWERHEAD, MASS FLOW CONTROLLER AND POWER SUPPLY. SAMPLES ARE PLACED ON THE HEATER AND ARE EXPOSED TO GASES DISTRIBUTED VIA THE SHOWERHEAD. DURING GROWTH A HIGH VOLTAGE IS ALSO APPLIED BETWEEN THE HEATER AND THE GAS SHOWERHEAD TO FORM A PLASMA. THE TEMPERATURE OF THE SAMPLES IS…

  8486 20 00 · GB 2017 · GB503470578