KN-nummer
8541 29 00 Andra
Under 8541 — Halvledarkomponenter (t.ex. dioder, transistorer, halvledarbaserade omvandlare); ljuskänsliga halvledarkomponenter, inbegripet fotoelektromotoriska celler, även sammanfogade till moduler eller monterade i paneler; lysdioder (LED), även sammanfogade med andra lysdioder (LED); monterade piezoelektriska kristaller
Import till EU
- Tullsats (tredjeland)
- 0 % (fri)
- EUDR
- Omfattas inte
- Taric-nummer (10 siffror)
- 1
Källor: Tullverket (Tulltaxan), EUR-Lex · cn2026. Ursprungsland, förmånstull och nästa steg ›
Varor som har klassificerats här
Exempel ur EU:s databas över bindande klassificeringsbesked (BKB/BTI). Beskeden gäller bara för sin innehavare och många har löpt ut — se dem som vägledning, inte som beslut för din vara.
IGBT MODULE. WITH MOTOR AND TRACTION DRIVES, AUXILARY INVERTERS, HIGH POWER CONVERTERS, WIND TURBINES. ELECTRICAL FEATURES INCLUDE HIGH DC STABILITY, HIGH CURRENT DENSITY, LOW SWITCHING LOSSES. MECHANICAL FEATURES INCLUDE HIGH CREEPAGE AND CLEARANCE DISTANCES. HIGH POWER DENSITY, COPPER BASE PLATE. WITH INTEGRATED NTC (NEGATIVE TEMPERATURE COEFFICIENT RESISTOR)
IGBT MODULE AND EMITTER CONTROLLED 4 DIODE AND NTC. HAS AUXILARY INVERTERS, HIGH POWER CONVERTERS, MOTOR DRIVES, TRACTION DRIVES, UPS SYSTEMS AND WIND TURBINES. HIGH DC STABILITY, HIGH SHORT CIRCUIT CAPABILITY, SELF LIMITING SHORT CIRCUIT CURRENT. HIGH CREEPAGE AND CLEARANCE DISTANCES, HIGH POWER AND THERMAL CYCLING CAPABILITY, HIGH POWER DENSITY.
IGBT MODULE AND EMITTER CONTROLLED DIODE AND PRESSFIT/NTC (NEGATIVE TEMPERATURE COEFFICIENT RESISTOR. FEATURES MOTOR AND SERVO DRIVES, UPS SYSTEMS,. HIGH POWER DENSITY, ISOLATED BASE PLATE, STANDARD HOUSING.
A POWER MOSFET (METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR). WITH A DISSPATATION RATE OF MORE THAN 1 WATT. IN A 3 LEAD PACKAGE. PACKAGE APPROX LENGTH (NOT INCLUDING LEADS (21 MM) 0.82 INCH. APPLICATIONS INCLUDE RECTIFICATION FOR POWER SUPPLIES, ETC.
IGBT MODULE WITHOUT ANY DRIVERS. DOES NOT CONTAIN ANY PHOTOSENSITIVE DEVICES. IT CONSISTS OF FIVE IGBTS, FIVE DIODES AND A NEGATIVE TEMPERATURE COEFFICIENT RESISTOR (NTC). The end application in which this module fits is a photovoltaic inverter.
THE PRODUCT IS AN INSULATED GATE BI-POLAR TRANSISTOR. INTERCONNECTING A DIODE BETWEEN THE COLLECTOR AND THE EMITTER. THE UNIT IS MOUNTED IN A SINGLE CAPSULE. THE OVERALL DIAMETER IS 112 MM. DEPTH IS 26MM.
THE DEVICE IS A HIGH RELIABILITY N CHANNEL POWER FIELD EFFECT TRANSISTOR DESIGNED FOR A WIDE TEMPERATURE RANGE APPLICATIONS SUCH AS DOWN HOLE INSTRUMENTATION, AEROSPACE AND INDUSTRIAL PROCESS CONTROL. HIGH DC CURRENT CAPABILITY COMBINED WITH LOW RDS ON ENABLE THE COMPONENT SUITABLE FOR BOTH DC AND SWITCHING APPLICATIONS.
TEMPERATURE SENSOR CABLE. THIS IS A COMPOSITE GOOD COMPRISING A TRANSISTOR (SENSOR), A CABLE AND A CONNECTOR. THE SENSOR MONITORS THE TEMPERATURE WITHIN A SPECIFIC AREA OF AN AUTOMATIC DATA PROCESSING MACHINE AND FACILITATES TEMPERATURE CONTROL (ADJUSTMENT OF FAN SPEED). THE TRANSISTOR (SENSOR) GIVES THE ESSENTIAL CHARACTER.
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