8542 32 75 Andra minnen

Import till EU

Tullsats (tredjeland)

0 % (fri)

EUDR

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Taric-nummer (10 siffror)

1

Källor: Tullverket (Tulltaxan), EUR-Lex · cn2026. Ursprungsland, förmånstull och nästa steg ›

Närliggande KN-nummer

• 8542 32 11 Integrerade multikomponentkretsar
• 8542 32 19 Andra
• 8542 32 31 Med en minneskapacitet av högst 512 Mbit
• 8542 32 39 Med en minneskapacitet av mer än 512 Mbit
• 8542 32 45 Statiska direktminnen (S-RAMs) inbegripet direktbuffertminnen (cache-RAMs)
• 8542 32 55 UV-raderbara, programmerbara läsminnen (EPROMs)
• 8542 32 61 Med en minneskapacitet av högst 512 Mbit
• 8542 32 69 Med en minneskapacitet av mer än 512 Mbit
• 8542 32 90 Andra minnen

Varor som har klassificerats här

Exempel ur EU:s databas över bindande klassificeringsbesked (BKB/BTI). Beskeden gäller bara för sin innehavare och många har löpt ut — se dem som vägledning, inte som beslut för din vara.

• THE MEMORY WITH STORAGE CAPACITY OF 524,288 BITS OF SERIAL ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY (EEPROM OR E ² PROM) ORGANIZED AS 65,536 WORDS OF 8-BITS EACH (65,536 X 8). THE DEVICE IS SUITABLE FOR INDUSTRIAL AND COMMERCIAL APPLICATIONS, CONSTRUCTED IN 8 PIN CONFIGURATION.

  8542 32 75 · GB 2010 · GB119557255

• MULTI CHIP PACKAGE MEMORY INTEGRATED CIRCUIT (IC) ) FOR A MOBILE PHONE CONTAINING 1X256 Mbit nor flash and an elpida 1 x 128 MB DDR SDRAM.

  8542 32 75 · GB 2009 · GB118227386

• A 1GB NAND FLASH/512MB MOBILE DDR SDRAM ELECTRONIC INTEGRATED CIRCUIT, FOR INCORPORATION INTO A MOBILE PHONE. MEASURMENTS 1.5 X 1.5 CM.

  8542 32 75 · GB 2008 · GB117322892

• A 15 X 15 MM POP MCP MEMORY INTERGRATED CIRCUIT, 512 MB 1.8V BURST FLASH, 160 BALL, PB FREE 0.65 M MPITCH, 80 NS ACCESS TIME, DUAL BOOT, 66 M HZ BURST, X 16 SLC NAND FLASH X 16 DDR 133 MHZ SDRAM.

  8542 32 75 · GB 2008 · GB117322990

• 256 MB, MULTI LEVEL, CELL , 1.8 VOLT SYNCHRONOUS FLASH MEMORY WITH BURST MODE INTERFACE.THE DEVICE WILL BE USED IN A 56 ACTIVE BALL MATRIX FVBGA CHIP SCALE PACKAGE.

  8542 32 75 · GB 2007 · GB116462583

• 64 MB NAND FLASH MEMORY, OF BINARY TECHNOLOGY, WHICH PROVIDES A HIGH DENSITY MEMORY SOLUTION WITH AN MMC/SD AS WELL AS SPI COMPATIBLE INTERFACE.WITH AN OPERATING TEMPERATURE OF 2.7 TO 3.6V, A VARIABLE CLOCK RATE OF O TO 25MHZ, AND UP TO 2048MB OF DATA STORAGE.

  8542 32 75 · GB 2007 · GB116462877

• 512MB 2X256MBIT, 70NS SIMULTANEOUS RWW FLASH MEMORY. FOR INCORPORATION INTO A MOBILE PHONE.

  8542 32 75 · GB 2007 · GB116457278

• 64 MB NAND FLASH MEMORY, MLC TECHNOLOGY, WHICH PROVIDES A HIGH DENSITY MEMORY SOLUTION WITH AN MMC/SD AS WELL AS SPI COMPATIBLE INTERFACE.WITH AN OPERATING TEMPERATURE OF 2.7 TO 3.6V, A VARIABLE CLOCK RATE OF O TO 25MHZ, AND UP TO 2048MB OF DATA STORAGE.

  8542 32 75 · GB 2007 · GB116461880