8542 39 90 Andra

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Taric-nummer (10 siffror)

1

Källor: Tullverket (Tulltaxan), EUR-Lex · cn2026. Ursprungsland, förmånstull och nästa steg ›

Närliggande KN-nummer

• 8542 39 11 Integrerade multikomponentkretsar
• 8542 39 19 Andra

Varor som har klassificerats här

Exempel ur EU:s databas över bindande klassificeringsbesked (BKB/BTI). Beskeden gäller bara för sin innehavare och många har löpt ut — se dem som vägledning, inte som beslut för din vara.

• Elektronisk krets Elektronisk integrerad krets, enligt uppgift en monolitkrets, försedd med ett kvadratiskt hölje av plast med ett sidomått av 10 mm. Kretsen som är försedd med 44 anslutningar ska enligt uppgift ingå som en komponent i en ultraljudsflödesmätare.

  8542 39 90 · SE 2012 · SETIL 2012-316

• ELECTRONIC INTEGRATED CIRCUIT OF 32MBITS CAPACITY WITH A PROGRAMMABLE READ ONLY MEMORY. HAS A 1.8V SUPPLY VOLTAGE AND A SERIAL OR PARALLEL FPGA CONFIGURATION INTERFACE. THE DEVICE HAS A BUILT IN DATA DECOMPRESSOR AND HAS REPROGRAMMABLE METHOD FOR STORING LONGER OR MULTIPLE BIT STREAMS.

  8542 39 90 · GB 2019 · GBBTI504520979

• A MAGNETICALLY BIASED HALL-EFFECT INTEGRATED CIRCUIT, THAT INCLUDES A MAGNET, BIPOLAR TRANSISTORS, CMOS DEVICES, POLYSILICON RESISTORS, CAPACITORS AND SPECIALLY-DESIGNED EPITAXIAL SILICON CONFIGURED AS A HALL ELEMENT WITHIN THE SINGLE SILICON SUBSTRATE. THE INTEGRATED CIRCUIT IS ONE COMPONENT OF A FINISHED SENSOR ASSEMBLY. TYPICALLY IT IS ATTACHED TO A PRINTED CIRCUIT BOARD, WITH EITHER…

  8542 39 90 · GB 2018 · GBBTI503874840

• HYBRID MICROCIRCUITS CONSISTING A MAGNETICALLY BIASED HALL-EFFECT INTEGRATED CIRCUIT, DISCRETE RESISTORS AND CAPACITORS ON A PRINTED CIRCUIT BOARD ENCAPSULATED IN CASING. THE HALL EFFECT IC INCLUDES A MAGNET, BIPOLAR TRANSISTORS, CMOS DEVICES, POLYSILICON RESISTORS, CAPACITORS AND SPECIALLY-DESIGNED EPITAXIAL SILICON CONFIGURED AS A HALL ELEMENT WITHIN THE SINGLE SILICON SUBSTRATE. THE HYBRID…

  8542 39 90 · GB 2018 · GBBTI503874938

• A SINGLE CHIP HALL EFFECT INTEGRATED CIRCUIT THAT INCLUDES VARIOUS ACTIVE AND PASSIVE COMPONENTS SUCH AS BIPOLAR TRANSISTORS, CMOS DEVICES, POLYSILICON RESISTORS, CAPACITORS, AND SPECIALLY-DESIGNED EPITAXIAL SILICON CONFIGURED AS A HALL ELEMENT WITHIN THE SINGLE SILICON SUBSTRATE AND INDIVISIBLY OVER MOULDED WITH A POWER LEAD FRAME AND DISCRETE INDUCTOR USING STANDARD SEMICONDUCTOR MANUFACTURING…

  8542 39 90 · GB 2018 · GBBTI503875249

• A PREPROGRAMMED SEMI-CONDUCTOR DEVICE IN THE FORM OF A MONOLITHIC APPLICATION SPECIFIC INTEGRATED CIRCUIT (ASIC). THE IC CONTAINS NO OTHER ACTIVE, PASSIVE OR DISCREET COMPONENTS. IT IS USED FOR ANALYSIS OF DATA PRODUCED BY THE SENSING ELEMENTS IN SMOKE DETECTOR PRODUCTS TO DETERMINE WHETHER THE DATA BEING RETURNED INDICATES AN ALARM CONDITION THAT SHOULD BE REPORTED BY THE DETECTOR.

  8542 39 90 · GB 2017 · GB503553964

• A PREPROGRAMMED MONOLITHIC APPLICATION SPECIFIC INTEGRATED CIRCUIT (ASIC). THE IC HAS NO OTHER ACTIVE, PASSIVE OR DISCREET COMPONENTS. IT IS USED IN ISOLATOR BASE, CALL POINT AND SMOKE DETECTOR DESIGNS, FOR ADDRESSED DATA ACQUISITION AND COMMUNICATION.

  8542 39 90 · GB 2017 · GB503554079

• A FULL BRIDGE DRIVE INTEGRATED CIRCUIT COMPRISING A FULL BRIDGE CONTROLLER MONOLITHIC INTEGRATED CIRCUIT AND SEPARATE POWER METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR. ENCAPSULATED IN A MOULDED PACKAGE. IT CANNOT BE DIRECTLY INCORPORATED INTO AUTOMOBILE OR OTHER APPLICATIONS WITHOUT FURTHER PROCESSING.

  8542 39 90 · GB 2017 · GB503476070