HS subheading 8542 32 Memories

Origin, preferential duty and next steps ›

• 8542 32 11 Multi-component integrated circuits (MCOs)
• 8542 32 19 Other
• 8542 32 31 With a storage capacity not exceeding 512 Mbits
• 8542 32 39 With a storage capacity exceeding 512 Mbits
• 8542 32 45 Static random-access memories (S-RAMs), including cache random-access memories (cache-RAMs)
• 8542 32 55 UV erasable, programmable, read only memories (EPROMs)
• 8542 32 61 With a storage capacity not exceeding 512 Mbits
• 8542 32 69 With a storage capacity exceeding 512 Mbits
• 8542 32 75 Other
• 8542 32 90 Other memories

Examples from the EU database of Binding Tariff Information (BTI). A ruling binds only its holder and many have expired — read them as guidance, not as a decision for your product.

• AN INTEGRATED CIRCUIT WITH MEMORY OF 32 MBITS. THIS DEVICE IS AN ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY WHICH REMAINS STABLE WHEN IS POWER IS REMOVED THE INTEGRATED CIRCUIT HAS A 1.8V SUPPLY VOLTAGE, WITH A SERIAL OR PARALLEL FIELD-PROGRAMMABLE GATE ARRAY CONFIGURATION INTERFACE THE INTEGRATED CIRCUIT ALSO FEATURES A LOW-POWER ADVANCED COMPLEMENTARY METAL OXIDE SEMICONDUCTOR NOR FLASH PROCESS

  8542 32 61 · GB 2019 · GBBTI504520489

• THE PRODUCT IS AN ELECTRONIC COMPONENT CALLED A SIP (SYSTEM-IN-PACKAGE) COMPONENT. THESE SIP COMPONENTS ARE COMPOSED OF COMMERCIAL MEMORIES STACKED VERTICALLY AND ENCASED IN A HARD PLASTIC COMPOUND. SUCH COMPONENTS ARE VERY ROBUST WHEN EXPOSED TO VIBRATIONS, SHOCKS AND TEMPERATURE CHANGES. THIS MAKES THEM SUITABLE FOR HARSH ENVIRONMENTS SUCH AS AEROSPACE AND SPACE. THESE SIP COMPONENTS USE…

  8542 32 11 · IE 2019 · IEBTI19NT-14-8383-01

• A CMOS STATIC RAM. THIS IS RAM (RANDOM ACCESS MEMORY) INTEGRATED CIRCUIT SPECIFICALLY DESIGNED FOR HOLDING MEMORY IN A DEVICE.

  8542 32 45 · IE 2017 · IE17NT-14-5207-01

• AN INTEGRATED CIRCUIT CHIP CONTAINING A MICROPROCESSOR (SPARC) AND ASSOCIATED FUNCTIONS (E.G NETWORK, MEMORY CONTROLLER ETC.) THIS CHIP IS A HIGH RELIABILITY CHIP USED IN THE SPACE AND AEROSPACE INDUSTRIES. THE PRODUCT IS CONSIDERED TO BE A MULTI-COMPONENT INTEGRATED CIRCUIT (MCO) MEMORY.

  8542 32 11 · IE 2017 · IE17NT-14-4807-02

• MEMORY IN THE FORM OF AN INTEGRATED CIRCUIT OF MOS TECHNOLOGY

  8542 32 90 · IE 2014 · IE13NT-14-1974-1

• CACHE MEMORY IN THE FORM OF AN INTEGRATED CIRCUIT OF MOS TECHNOLOGY FOR USE IN COMPUTERS

  8542 32 45 · IE 2014 · IE13NT-14-1975-05

• D-RAM-DYNAMIC RANDOM ACCESS MEMORY IN THE FORM OF AN INTEGRATED CIRCUIT OF MOS TECHNOLOGY. IT IS FOR USE IN A COMPUTER AND HAS STORAGE CAPACITY OF BETWEEN 4MB TO 16MB.

  8542 32 31 · IE 2014 · IE13NT-14-1975-01

• RANDOM ACCESS MEMORY (RAM) IN THE FORM OF AN INTEGRATED CIRCUIT OF MOS TECHNOLOGY FOR USE IN COMPUTERS

  8542 32 90 · IE 2014 · IE13NT-14-1975-04